Samsung’s annual Memory Tech Day is taking place in San Jose this morning, and as part of the event, the company is making a couple of notable memory technology announcements/disclosures. The highlight of Samsung’s event is the introduction of Shinebolt, Samsung’s HBM3E memory that will set new marks for both memory bandwidth and memory capacity for high-end processors. The company is also disclosing a bit more on their GDDR7 memory, which will mark a significant technological update to the GDDR family of memory standards.

Micron Publishes Updated DRAM Roadmap: 32 Gb DDR5 DRAMs, GDDR7, HBMNext

In addition to unveiling its first HBM3 memory products yesterday, Micron also published a fresh DRAM roadmap for its AI customers for the coming years. Being one of the...

4 by Anton Shilov on 7/27/2023

Samsung Completes Initial GDDR7 Development: First Parts to Reach Up to 32Gbps/pin

Samsung has announced this evening that they have completed development on their first generation of GDDR7 memory. The next iteration of the high bandwidth memory technology, which has been...

11 by Ryan Smith on 7/18/2023

Micron Expects to Debut GDDR7 Memory in 2024

Micron late on Wednesday revealed plans to introduce its first GDDR7 memory devices in the first half of 2024. The memory is expected to be used by next generation...

12 by Anton Shilov on 6/29/2023

Cadence Delivers Technical Details on GDDR7: 36 Gbps with PAM3 Encoding

When Samsung teased the ongoing development of GDDR7 memory last October, the company did not disclose any other technical details of the incoming specification. But Cadence recently introduced the...

29 by Anton Shilov on 3/8/2023

Micron Announces 20-Year Plan To Build $100 Billion U.S. Fab Complex

Now that the U.S. government has finally settled the matter of whether it would be providing subsidies to entice chip fabs to setup shop within the U.S., those fabs...

48 by Anton Shilov on 10/10/2022

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