3nm

TSMC has introduced a brand-new manufacturing technology roughly every two years over the past decade. Yet as the complexity of developing new fabrication processes is compounding, it is getting increasingly difficult to maintain such a cadence. The company has previously acknowledged that it will start producing chips using its N3 (3 nm) node about four months later than the industry is used to (i.e., Q2), and in a recent conference call with analysts, TSMC revealed additional details about its latest process technology roadmap, focusing on their N3, N3E, and N2 (2 nm) technologies. N3 in 2023 TSMC's N3 technology will provide full node scaling compared to N5, so its adopters will get all performance (10% - 15%), power (-25% ~ -30%), and area (1.7x higher for...

Samsung Foundry: 2nm Silicon in 2025

One of the key semiconductor technologies beyond 3D FinFET transistors are Gate-All-Around transistors, which show promise to help extend the ability to drive processors and components to higher performance...

27 by Dr. Ian Cutress on 10/6/2021

Samsung: Deployment of 3nm GAE Node on Track for 2022

Samsung Foundry has made some changes to its plans concerning its 3 nm-class process technologies that use gate-all-around (GAA) transistors, or what Samsung calls its multi-bridge channel field-effect transistors...

32 by Anton Shilov on 7/9/2021

An AnandTech Interview with TSMC: Dr. Kevin Zhang and Dr. Maria Marced

In the past week, TSMC ran its 2021 Technology Symposium, covering its latest developments in process node technology designed to improve the performance, costs, and capabilities for its customers...

28 by Dr. Ian Cutress on 6/8/2021

TSMC Update: 2nm in Development, 3nm and 4nm on Track for 2022

For TSMC, being the world's largest foundry with nearly 500 customers has its peculiarities. On the one hand, the company can serve almost any client with almost any requirements...

73 by Anton Shilov on 4/26/2021

TSMC to Spend $100B on Fabs and R&D Over Next Three Years: 2nm, Arizona Fab & More

TSMC this week has announced plans to spend $100 billion on new production facilities as well as R&D over the next three years. The world's largest contract maker of...

45 by Anton Shilov on 4/2/2021

Samsung Foundry: New $17 Billion Fab in the USA by Late 2023

Samsung Foundry has filed documents with authorities in Arizona, New York, and Texas seeking to build a leading-edge semiconductor manufacturing facility in the USA. The potential fab near Austin...

35 by Anton Shilov on 2/10/2021

TSMC and Graphcore Prepare for AI Acceleration on 3nm

One of the side announcements made during TSMC’s Technology Symposium was that it already has customers on hand with product development progressing for its future 3nm process node technology...

2 by Dr. Ian Cutress on 8/27/2020

Where are my GAA-FETs? TSMC to Stay with FinFET for 3nm

As we passed that 22nm to 16nm barrier, almost all the major semiconductor fabrication companies on the leading edge transitioned from planar transistors to FinFET transistors. The benefits of...

37 by Dr. Ian Cutress on 8/26/2020

TSMC Details 3nm Process Technology: Full Node Scaling for 2H22 Volume Production

At TSMC’s annual Technology Symposium, the Taiwanese semiconductor manufacturer detailed characteristics of its future 3nm process node as well as laying out a roadmap for 5nm successors in the...

58 by Andrei Frumusanu on 8/24/2020

Intel to use Nanowire/Nanoribbon Transistors in Volume ‘in Five Years’

This year, at the international VLSI conference, Intel’s CTO Mike Mayberry gave one of the plenary presentations, which this year was titled ‘The Future of Compute’. Within the presentation...

14 by Dr. Ian Cutress on 6/22/2020

Samsung Starts Mass Production at V1: A Dedicated EUV Fab for 7nm, 6nm, 5nm, 4nm, 3nm Nodes

Samsung Foundry has started mass production of chips using its 6LPP and 7LPP manufacturing processes at its new V1 fab. The new facility employs one of the industry’s first...

29 by Anton Shilov on 2/20/2020

Intel’s Manufacturing Roadmap from 2019 to 2029: Back Porting, 7nm, 5nm, 3nm, 2nm, and 1.4 nm

One of the interesting disclosures here at the IEEE International Electron Devices Meeting (IEDM) has been around new and upcoming process node technologies. Almost every session so far this...

138 by Dr. Ian Cutress on 12/11/2019

TSMC: 3nm EUV Development Progress Going Well, Early Customers Engaged

Development of new fabrication technologies never stops at leading-edge companies such as TSMC. Therefore, it is not surprising to hear the annoucement that development of TSMC’s 3nm node is...

76 by Anton Shilov on 7/23/2019

Synopsys to Accelerate Samsung’s 7nm Ramp with Yield Explorer Platform

Synopsys has announced an acceleration of development on its yield learning platform designed to speed up ramp up of chips made using Samsung Foundry’s 7LPP (7 nm low power...

16 by Anton Shilov on 7/4/2019

Samsung Announces 3nm GAA MBCFET PDK, Version 0.1

So what comes after 7nm, after 6nm, after 5nm, and after 4nm? That's right: 3nm! At Samsung's Foundry Forum event today, Samsung has announced that the first alpha version...

32 by Dr. Ian Cutress on 5/14/2019

Samsung Foundry Updates: 8LPU Added, EUVL on Track for HVM in 2019

Samsung recently hosted its Samsung Foundry Forum 2018 in Japan, where it made several significant foundry announcements. Besides reiterating plans to start high-volume manufacturing (HVM) using extreme ultraviolet lithography...

29 by Anton Shilov on 9/6/2018

GlobalFoundries Gives 7 nm Capacity Update, Mulls Skipping 5 nm

High-ranking executives of GlobalFoundries this month gave several updates concerning future plans of the contract maker of semiconductors. As it appears, in a bid to provide more tangible advantages...

19 by Anton Shilov on 5/31/2018

Samsung Foundry Roadmap: EUV-Based 7LPP for 2018, 3 nm Incoming

Samsung Foundry this week updated its fabrication technology roadmap, introducing a number of changes and announcing the first details about its 3 nm manufacturing process that is several years...

25 by Anton Shilov on 5/24/2018

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